Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
نویسندگان
چکیده
منابع مشابه
Characteristics of InGaAsN-GaAsSb type-II ‘‘W’’ quantum wells
InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm r...
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ژورنال
عنوان ژورنال: Optical and Quantum Electronics
سال: 2017
ISSN: 0306-8919,1572-817X
DOI: 10.1007/s11082-017-0891-0